2009. 12. 22 1/2 semiconductor technical data ktc2022d/l epitaxial planar npn transistor revision no : 6 general purpose application. features ? low collector-emitter saturation voltage : v ce(sat) =-2.0v(max.). maximum rating (ta=25 ? ) dpak dim millimeters a b c d f h i j k l 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 2.70 0.2 2.30 0.1 1.00 max 2.30 0.2 0.5 0.1 2.00 0.20 0.50 0.10 e 0.91 0.10 m 0.90 0.1 o a c d b e k i j q h f f m o p l 123 1. base 2. collector 3. emitter 1.00 0.10 p 0.95 max q + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) note : h fe (1) classification 0:70~140, y:120~240. dim millimeters ipa d b e h f f c a p l i j 123 a b c d e f g h i j l p 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 9.50 0.6 2.30 0.1 0.76 0.1 1.0 max 2.30 0.2 0.5 0.1 0.50 0.1 1.0 0.1 0.90 max g 1. base 2. collector 3. emitter 2 .0 0.2 characteristic symbol rating unit collector-base voltage v cbo 130 v collector-emitter voltage v ceo 100 v v ces 130 v emitter-base voltage v ebo 8 v collector current i c 5 a i cp 10 a base current i b 0.5 a collector power dissipation (tc=25 ? ) p c 20 w junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =130v, i e =0 - - 10 a i ceo v ce =60v, i b =0 - - 1.5 emitter cut-off current i ebo v eb =8v, i c =0 - - 1.0 ma collector-emitter breakdown voltage v (br)ceo i c =50ma, i b =0 100 - - v dc current gain h fe (1) v ce =5v, i c =1ma 35 - - h fe (2)(note) v ce =5v, i c =1a 70 - 240 h fe (3) v ce =5v, i c =4a 20 - - collector-emitter saturation voltage v ce(sat) i c =4a, i b =0.4a - - 2.0 v base-emitter voltage v be v ce =5v, i c =1a - - 1.5 v transition frequency f t v ce =5v, i c =1a - 30 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 40 - pf
2009. 12. 22 2/2 ktc2022d/l revision no : 6 collector power dissipation 0 0 amb ient te mperat ure t a ( c) pc - ta collector-emitter saturation ce(sat) 0.3 0.1 0.03 0.01 collector current i (a) c v - i safe operating area ce collector-emitter voltage v (v) 2510 30 c collector current i (a) 0.1 ce(sat) c voltage v (v) 1310 0.03 0.05 0.1 0.3 0.5 1 2 common emitter i /i =10 c b tc=75 c tc=25 c tc=-25 c p (w) c 25 50 75 100 125 150 100 300 0.3 0.5 1 3 5 10 20 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature * i max.(pulsed) c c i max. (continuous) 1ms 100ms * * * dc operation tc=25 c v max. ceo 10ms 4 8 12 16 20 24 * tc=25 c ta=25 c 1 2 1 2 dc current gain h fe collector current i (ma) c h - i fe c 11 01 00 1000 10000 10 100 500 300 i - v cce ce collector-emitter voltage v (v) 0 c 0 collector current i (a) 1.0 2.0 3.0 4.0 5.0 6.0 1.0 2.0 3.0 4.0 5.0 common emitter tc=25 c 100 80 60 40 20 i =10ma b common emitter v =5v ce tc=75 c tc=25 c tc=-25 c
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